The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2008

Filed:

Sep. 04, 2007
Applicants:

Tsutomu Sato, Yokohama, JP;

Hajime Nagano, Yokohama, JP;

Ichiro Mizushima, Yokohama, JP;

Takashi Yamada, Ebina, JP;

Yuso Udo, Chofu, JP;

Shinichi Nitta, Yokohama, JP;

Inventors:

Tsutomu Sato, Yokohama, JP;

Hajime Nagano, Yokohama, JP;

Ichiro Mizushima, Yokohama, JP;

Takashi Yamada, Ebina, JP;

Yuso Udo, Chofu, JP;

Shinichi Nitta, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/01 (2006.01); H01L 27/12 (2006.01); H01L 31/0392 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device including a first semiconductor layer formed on a semiconductor substrate, a second semiconductor layer surrounding the first semiconductor layer, the second semiconductor layer being formed on the semiconductor substrate with one of an insulating film and a cavity, and a third semiconductor layer surrounding the second semiconductor layer, the third semiconductor layer being formed on the semiconductor substrate.


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