The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2008
Filed:
Oct. 14, 2005
Applicants:
Ching-yu Chang, Yuansun Village, Yilang County, TW;
Chin-hsiang Lin, Hsin-Chu, TW;
Burn Jeng Lin, Hsin-Chu, TW;
David LU, Taipei, TW;
Inventors:
Ching-Yu Chang, Yuansun Village, Yilang County, TW;
Chin-Hsiang Lin, Hsin-Chu, TW;
Burn Jeng Lin, Hsin-Chu, TW;
David Lu, Taipei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for immersion lithography includes providing a substrate coated with an imaging layer, dispensing a conductive immersion fluid between the substrate and an imaging lens of a lithography system, and performing an exposure process to the imaging layer using a radiation energy through the conductive immersion fluid.