The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2008
Filed:
Apr. 14, 2003
Arvind Kamath, Mountain View, CA (US);
Wai Lo, Lake Oswego, OR (US);
Venkatesh Gopinath, Fremont, CA (US);
Arvind Kamath, Mountain View, CA (US);
Wai Lo, Lake Oswego, OR (US);
Venkatesh Gopinath, Fremont, CA (US);
LSI Corporation, Milpitas, CA (US);
Abstract
A method of forming a high k gate insulation layer in an integrated circuit on a substrate. A high k layer is deposited onto the substrate, and patterned with a mask to define the high k gate insulation layer and exposed portions of the high k layer. The exposed portions of the high k layer are subjected to an ion implanted species that causes lattice damage to the exposed portions of the high k layer. The lattice damaged exposed portions of the high k layer are etched to leave the high k gate insulation layer.