The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2008
Filed:
Jan. 31, 2006
Kuang-jung J. Chen, Poughkeepsie, NY (US);
Wu-song S. Huang, Poughkeepsie, NY (US);
Chung-hsi J. Wu, Poughkeepsie, NY (US);
Kuang-Jung J. Chen, Poughkeepsie, NY (US);
Wu-Song S. Huang, Poughkeepsie, NY (US);
Chung-Hsi J. Wu, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods for improving a single layer resist (SLR) patterning scheme, and in particular, its SLR layer and anti-reflective coating (ARC) etch selectivity, are disclosed. In one method, a patterned SLR layer over an anti-reflective coating (ARC) is provided and at least a portion of the patterned SLR layer and a portion of the ARC are exposed to radiation. The radiation may include, for example, an electron beam or an ion beam. The radiation exposure selectively breaks the polymer chains of the ARC and reduces the thickness of the ARC due to the loss of volatile function groups and free volume. As a result, the etch rate of the ARC is increased due to the conversion from polymer to monomer. Therefore, less resist will be consumed during, for example, an ARC open etch.