The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2008
Filed:
Sep. 14, 2006
Applicants:
Gowri Kota, Fremont, CA (US);
Frank Y. Lin, Fremont, CA (US);
Qinghua Zhong, Fremont, CA (US);
Inventors:
Assignee:
LAM Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for etching features in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with at least one photoresist line having a pair of sidewalls ending at a line end. A coating is placed over the photoresist line comprising at least one cycle of depositing a polymer layer over the photoresist line, wherein an amount of polymer at the line end is greater than an amount of polymer on the sidewalls, and hardening the polymer layer. Features are etched into the etch layer through the photoresist mask, wherein a line end shortening (LES) is less than or equal to 1.