The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2008
Filed:
Mar. 15, 2004
Hiroshi Tobisaka, Nagano, JP;
Tatsuhiko Fujihira, Nagano, JP;
Shin Kiuchi, Nagano, JP;
Yoshiaki Minoya, Nagano, JP;
Takeshi Ichimura, Nagano, JP;
Naoki Yaezawa, Nagano, JP;
Ryu Saitou, Nagano, JP;
Shouichi Furuhata, Nagano, JP;
Yuichi Harada, Nagano, JP;
Hiroshi Tobisaka, Nagano, JP;
Tatsuhiko Fujihira, Nagano, JP;
Shin Kiuchi, Nagano, JP;
Yoshiaki Minoya, Nagano, JP;
Takeshi Ichimura, Nagano, JP;
Naoki Yaezawa, Nagano, JP;
Ryu Saitou, Nagano, JP;
Shouichi Furuhata, Nagano, JP;
Yuichi Harada, Nagano, JP;
Fuji Electric Device Technology Co., Tokyo, JP;
Abstract
A semiconductor device in includes a transistor and a surge absorption element such as Zener diode, that are formed on the same substrate and connected in parallel. The surge absorption element has a resistance during breakdown operation that is smaller than the resistance of the surge absorption element during breakdown operation of the transistor. In addition, the secondary breakdown current of the surge absorption element is larger than the secondary breakdown current of the transistor. Upon application of a high ESD voltage and high surge voltage, the energy of the ESD and surge is absorbed by operation of the surge absorption element and is limited to a voltage equal to or less than the breakdown voltage of the transistor, which would otherwise be destroyed.