The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2008
Filed:
Jan. 06, 2006
Tzyh-cheang Lee, Hsinchu, TW;
Fu-liang Yang, Hsin-Chu, TW;
Jiunn-ren Hwang, Hsin-Chu, TW;
Tsung-lin Lee, Hsinchu, TW;
Tzyh-Cheang Lee, Hsinchu, TW;
Fu-Liang Yang, Hsin-Chu, TW;
Jiunn-Ren Hwang, Hsin-Chu, TW;
Tsung-Lin Lee, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A system and method for a sidewall SONOS memory device is provided. An electronic device includes a non-volatile memory. A substrate includes source/drain regions. A gate stack is directly over the substrate and between the source/drain regions. The gate stack has a sidewall. A nitride spacer is formed adjacent to the gate stack. A first oxide material is formed directly adjacent the spacer. An oxide-nitride-oxide structure is formed between the spacer and the gate stack. The oxide-nitride-oxide structure has a generally L-shaped cross-section on at least one side of the gate stack. The oxide-nitride-oxide structure includes a vertical portion and a horizontal portion. The vertical portion is substantially aligned with the sidewall and located between the first oxide material and the gate sidewall. The horizontal portion is substantially aligned with the substrate and located between the first oxide and the substrate.