The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7403276 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 22, 2008

Filed:

Mar. 23, 2006
Applicants:

Jang-ho Shin, Seoul, KR;

Han-ku Cho, Gyeonggi-do, KR;

Sang-gyun Woo, Gyeonggi-do, KR;

Suk-joo Lee, Gyeonggi-do, KR;

Inventors:

Jang-Ho Shin, Seoul, KR;

Han-Ku Cho, Gyeonggi-do, KR;

Sang-Gyun Woo, Gyeonggi-do, KR;

Suk-Joo Lee, Gyeonggi-do, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01B 9/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A photomask for measuring lens aberration, a method of manufacturing the photomask, and a method of measuring lens aberration using the photomask are provided. In an embodiment, the photomask includes a transparent substrate having first and second surfaces. A reference pattern group and an encoded pattern group are formed on the second surface of the transparent substrate, spaced apart from each other. An aperture that includes a Fresnel zone is formed to face the second surface on the second surface of the transparent substrate. Light throughput and measurement efficiency are improved.


Find Patent Forward Citations

Shin, Jang-Ho. (2008). Photomask for measuring lens aberration, method of its manufacture, and method of its use (U.S. Patent No. 7403276). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7403276

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