The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2008

Filed:

Jun. 27, 2006
Applicants:

Mong Song Liang, Hsin-Chu, TW;

Hun-jan Tao, Hsin-Chu, TW;

Inventors:

Mong Song Liang, Hsin-Chu, TW;

Hun-Jan Tao, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/01 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor structure includes a semiconductor substrate having a first surface and a second surface opposite the first surface, a gate dielectric over the first surface of the semiconductor substrate, a gate electrode over the gate dielectric, a source/drain region having at least a portion in the semiconductor substrate, a dielectric layer having a first surface and a second surface opposite the first surface wherein the first surface of the dielectric layer adjoins the second surface of the semiconductor substrate, and a contact plug in the dielectric layer, wherein the contact plug extends from a bottom side of the source/drain region to the second surface of the dielectric layer.


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