The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2008

Filed:

Jan. 13, 2005
Applicants:

Padmanabhan Krishnaraj, San Francisco, CA (US);

Pavel Ionov, Sunnyvale, CA (US);

Canfeng Lai, Fremont, CA (US);

Michael Santiago Cox, Davenport, CA (US);

Shamouil Shamouilian, San Jose, CA (US);

Inventors:

Padmanabhan Krishnaraj, San Francisco, CA (US);

Pavel Ionov, Sunnyvale, CA (US);

Canfeng Lai, Fremont, CA (US);

Michael Santiago Cox, Davenport, CA (US);

Shamouil Shamouilian, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.


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