The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2008

Filed:

Mar. 31, 2005
Applicants:

Victor Chan, New Paltz, NY (US);

Haining S. Yang, Wappingers Falls, NY (US);

Yong M. Lee, Singapore, SG;

Eng H. Lim, Singapore, SG;

Inventors:

Victor Chan, New Paltz, NY (US);

Haining S. Yang, Wappingers Falls, NY (US);

Yong M. Lee, Singapore, SG;

Eng H. Lim, Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods of fabricating a semiconductor device including a dual-hybrid liner in which an underlying silicide layer is protected from photoresist stripping chemicals by using a hard mask as a pattern during etching, rather than using a photoresist. The hard mask prevents exposure of a silicide layer to photoresist stripping chemicals and provides very good lateral dimension control such that the two nitride liners are well aligned.


Find Patent Forward Citations

Loading…