The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2008
Filed:
Apr. 03, 2006
Hsiang-ying Wang, Chia-Yi Hsien, TW;
Chin-cheng Chien, Tainan Hsien, TW;
Tsai-fu Hsiao, Hsin-Chu, TW;
Ming-yen Chien, Kao-Hsiung Hsien, TW;
Chao-chun Chen, Kao-Hsiung, TW;
Hsiang-Ying Wang, Chia-Yi Hsien, TW;
Chin-Cheng Chien, Tainan Hsien, TW;
Tsai-Fu Hsiao, Hsin-Chu, TW;
Ming-Yen Chien, Kao-Hsiung Hsien, TW;
Chao-Chun Chen, Kao-Hsiung, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A method of forming a MOS transistor, in which a co-implantation is performed to implant an implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region, for obtaining a good junction profile and improving short channel effect. The implant comprises carbon, a hydrocarbon, or a derivative of the hydrocarbon, such as one selected from a group consisting of C, Chd xH, and (CH), wherein x is a number of 1 to 10, y is a number of 4 to 20, and n is a number of 1 to 1000.