The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2008
Filed:
Sep. 30, 2004
Lee Chen, Cedar Creek, TX (US);
Hiromitsu Kambara, Austin, TX (US);
Caizhong Tian, Osaka, JP;
Tetsuya Nishizuka, Kita-ku, JP;
Toshihisa Nozawa, Kobe, JP;
Lee Chen, Cedar Creek, TX (US);
Hiromitsu Kambara, Austin, TX (US);
Caizhong Tian, Osaka, JP;
Tetsuya Nishizuka, Kita-ku, JP;
Toshihisa Nozawa, Kobe, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A plasma processing system for treating a substrate includes a processing chamber including a first chamber portion configured to receive a first gas for providing a plasma space, and a second chamber portion configured to receive a second gas for providing a process space having process chemistry to treat the substrate. A substrate holder is coupled to the second chamber portion of the processing chamber, and configured to support the substrate proximate the process space, and a plasma source is coupled to the first chamber portion of the processing chamber, and configured to form a plasma in the plasma space. A grid is located between the plasma space and the process space, and configured to permit the diffusion of the plasma between the plasma space and the process space in order to form the process chemistry from the process gas.