The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2008
Filed:
Sep. 04, 2003
Akitmitsu Hatta, Nankoku, JP;
Hiroaki Yoshimura, Nankoku, JP;
Keiichi Ishimoto, Kochi, JP;
Hiroaki Kanakusa, Kochi, JP;
Shinichi Kawagoe, Nankoku, JP;
Akitmitsu Hatta, Nankoku, JP;
Hiroaki Yoshimura, Nankoku, JP;
Keiichi Ishimoto, Kochi, JP;
Hiroaki Kanakusa, Kochi, JP;
Shinichi Kawagoe, Nankoku, JP;
Covalent Materials Corporation, Tokyo, JP;
Techno Network Shikoku Co., Ltd., Takamatsu-shi, JP;
Abstract
By uniformly forming an indefinite number of microscopic acicular crystals on a surface of a silicon substrate so as to be perpendicular to the surface of the substrate by plasma CVD method using a catalyst, it is possible to reliably, homogeneously and massively form an ultramicroscopic acicular silicon crystal having a substantial cone shape tapered so as to have a radius of curvature of not less than 1 nm to no more than 20 nm at its tip end and having a diameter of bottom surface of not less than 10 nm, and a height equivalent to or more than the diameter of bottom surface, at a desired location.