The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2008
Filed:
Sep. 07, 2006
Applicants:
Wesley Lin, Jhubei, TW;
Jhon-jhy Liaw, Hsin-Chu, TW;
Fang-shi Jordan Lai, Tainan, TW;
Chia-fu Lee, Houbi Township, Tainan County, TW;
Inventors:
Wesley Lin, Jhubei, TW;
Jhon-Jhy Liaw, Hsin-Chu, TW;
Fang-Shi Jordan Lai, Tainan, TW;
Chia-Fu Lee, Houbi Township, Tainan County, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A SRAM device includes at least one memory cell having a source line for receiving an internal supply power, and a voltage management circuit coupled to the source line for generating the internal supply power that varies in at least two different voltage levels, depending on various operation modes of the memory cell.