The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2008
Filed:
Apr. 13, 2005
Dieter Gräf, Burghausen, DE;
Markus Blietz, Tittmoning, DE;
Reinhold Wahlich, Tittmoning, DE;
Alfred Miller, Emmerting, DE;
Dirk Zemke, Marktl, DE;
Dieter Gräf, Burghausen, DE;
Markus Blietz, Tittmoning, DE;
Reinhold Wahlich, Tittmoning, DE;
Alfred Miller, Emmerting, DE;
Dirk Zemke, Marktl, DE;
Siltronic AG, Munich, DE;
Abstract
An SOI wafer is constructed from a carrier wafer and a monocrystalline silicon layer having a thickness of less than 500 nm, an excess of interstitial silicon atoms prevailing in the entire volume of the silicon layer. The SOI wafers may be prepared by Czochralski silicon single crystal growth, the condition v/G<(v/G)=1.3×10cm/(K·min) being fulfilled at the crystallization front over the entire crystal cross section, with the result that an excess of interstitial silicon atoms prevails in the silicon single crystal produced; separation of at least one donor wafer from this silicon single crystal, bonding of the donor wafer to a carrier wafer, and reduction of the thickness of the donor wafer, with the result that a silicon layer having a thickness of less than 500 nm bonded to the carrier wafer remains.