The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2008
Filed:
Sep. 13, 2004
Shuqiang Chen, Sunnyvale, CA (US);
Guoguang LI, Fremont, CA (US);
Shuqiang Chen, Sunnyvale, CA (US);
Guoguang Li, Fremont, CA (US);
n&k Technology, Inc., San Jose, CA (US);
Abstract
A system and a method for optical characterization of a symmetric grating illuminated at off-normal incident angle are provided, where the plane of incidence is parallel to the grating lines. In this case corresponding positive and negative diffraction orders have the same intensity and phase. Several approaches for exploiting this symmetry are given. The first approach is a symmetric rigorous coupled wave analysis (SRCWA) adapted to the symmetric case, which accounts for N positive and N negative diffraction orders with M=N+1 space harmonics, without approximation. Various approximation methods are also given. Approximate versions of the RCWA (or SRCWA) can be developed by neglecting polarization coupling for small angles of incidence. A normal incident angle calculation can be used to approximate a situation with a small angle of incidence. Refinements to this approximation include revision of grating depth or refractive indices to improve accuracy. Methods other than the RCWA can also be symmetry simplified according to the invention.