The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2008
Filed:
Jun. 09, 2005
Tomoki Uemura, Itami, JP;
Keiji Ishibashi, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Hideaki Nakahata, Itami, JP;
Tomoki Uemura, Itami, JP;
Keiji Ishibashi, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Hideaki Nakahata, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
An AlGaInN substrate in which particles having a grain size of at least 0.2 μm on a surface of the AlGaInN substrate are at most 20 in number when a diameter of the AlGaInN substrate is two inches, and a cleaning method with which the AlGaInN substrate can be obtained are provided. Further, an AlGaInN substrate in which, in a photoelectron spectrum of a surface of the AlGaInN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of Celectrons and a peak area of Nelectrons (Celectron peak area/Nelectron peak area) is at most 3, and a cleaning method with which the AlGaInN substrate can be obtained are provided. Still further, an AlN substrate in which, in a photoelectron spectrum of a surface of the AlN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of Alelectrons and a peak area of Nelectrons (Alelectron peak area/Nelectron peak area) is at most 0.65 and a cleaning method with which the AlN substrate can be obtained are provided.