The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2008
Filed:
Feb. 03, 2005
Yi-shing Chang, Hsinchu, TW;
Yeur-luen Tu, Taichung, TW;
Chia-shiung Tsai, Hsin-Chu, TW;
Wen-ting Chu, Kaohsiung County, TW;
Yi-Shing Chang, Hsinchu, TW;
Yeur-Luen Tu, Taichung, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Wen-Ting Chu, Kaohsiung County, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method for forming an improved etching hardmask oxide layer in a polysilicon etching process including providing a planarized semiconductor wafer process surface including adjacent first exposed polysilicon portions and exposed oxide portions; selectively etching through a thickness portion of the exposed oxide portions; thermally growing an oxide hardmask layer over the exposed polysilicon portions to form oxide hardmask portions; exposing second exposed polysilicon portions adjacent at least one oxide hardmask portion; and, etching through a thickness portion of the second exposed polysilicon portions.