The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2008
Filed:
Aug. 25, 2005
Ming-tsung Chen, Hsin-Chu Hsien, TW;
Chang-chi Huang, Miao- Li Hsien, TW;
Po-chao Tsao, Taipei Hsien, TW;
Ming-Tsung Chen, Hsin-Chu Hsien, TW;
Chang-Chi Huang, Miao- Li Hsien, TW;
Po-Chao Tsao, Taipei Hsien, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A method of performing salicide processes on a MOS transistor, wherein the MOS transistor comprises a gate structure and a source/drain region, the method comprising: performing a selective growth process to form a silicon layer on the top of the gate and the source/drain region; performing an ion implantation process to form a retarded interface layer between the silicon layer and the gate and source/drain region; forming a metal layer on the silicon layer; and reacting the metal layer with the silicon layer for forming a silicide layer.