The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2008
Filed:
Jul. 21, 2005
Kevin J. Yang, Santa Clara, CA (US);
Kevin J. Yang, Santa Clara, CA (US);
T-Ram Semiconductor, Inc., Milpitas, CA (US);
Abstract
A memory device having a thyristor-based storage element and an access device coupled to the thyristor-based storage element at a common storage node is described. The thyristor-based storage element has a first gate stack, where the first gate stack has a first workfunction configured to a base region of the thyristor-based storage element. The access device has a second gate stack, where the second gate stack has a second workfunction. The first gate stack includes a first conductive layer formed over a gate dielectric and a second conductive layer formed over the first conductive layer. The second gate stack includes the second conductive layer formed over the gate dielectric. The first workfunction is operationally distinct from the second workfunction.