The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7381611 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 03, 2008

Filed:

Aug. 04, 2003
Applicants:

Brian G. Johnson, San Jose, CA (US);

Stephen J. Hudgens, Santa Clara, CA (US);

Inventors:

Brian G. Johnson, San Jose, CA (US);

Stephen J. Hudgens, Santa Clara, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
Abstract

A phase change layer may switch between more and less conductive states in response to electrical stimulation. The phase change layer may be positioned over a non-switching ovonic material which acts as an electrode, a resistive heater, and an insulating barrier. The phase change layer may be positioned over a non-switching ovonic material which acts as an electrode, a resistive heater, and a thermal barrier.


Find Patent Forward Citations

Johnson, Brian. (2008). Multilayered phase change memory (U.S. Patent No. 7381611). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7381611

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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