The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2008
Filed:
Jun. 29, 2005
Toshiya Satoh, Kanasagou-machi, JP;
Masahiko Ogino, Hitachi, JP;
Tadanori Segawa, Hitachi, JP;
Yoshihide Yamaguchi, Fujisawa, JP;
Hiroyuki Tenmei, Yokohama, JP;
Atsushi Kazama, Chiyoda-machi, JP;
Ichiro Anjo, Koganei, JP;
Asao Nishimura, Kokubunji, JP;
Toshiya Satoh, Kanasagou-machi, JP;
Masahiko Ogino, Hitachi, JP;
Tadanori Segawa, Hitachi, JP;
Yoshihide Yamaguchi, Fujisawa, JP;
Hiroyuki Tenmei, Yokohama, JP;
Atsushi Kazama, Chiyoda-machi, JP;
Ichiro Anjo, Koganei, JP;
Asao Nishimura, Kokubunji, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
The present invention is a semiconductor device having the semiconductor element obtained by cutting a semiconductor wafer with the electrode pad formed on one side along a scribe line, a semiconductor element protective layer on the semiconductor element which has a opening on the pad, a stress cushioning layer on the layer which has the opening on the pad, a lead wire portion reaching the layer from the electrode pad via the openings, external electrodes on the lead wire portion, and the conductor protective layer on the layers, the layer and the conductor protective layer forming the respective end faces on the end surface of the semiconductor element inside the scribe line and exposing the range from the end face of the end surface to the inside of the scribe line.