The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2008
Filed:
Mar. 30, 2006
Ju-wang Hsu, Taipei, TW;
Chih-hsin Ko, Fongshan, TW;
Jyu-horng Shieh, Hsin-Chu, TW;
Baw-ching Perng, Hsinchu, TW;
Syun-ming Jang, Hsin-Chu, TW;
Ju-Wang Hsu, Taipei, TW;
Chih-Hsin Ko, Fongshan, TW;
Jyu-Horng Shieh, Hsin-Chu, TW;
Baw-Ching Perng, Hsinchu, TW;
Syun-Ming Jang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor structure includes a substrate, and a first MOS device on the first region of the substrate wherein the first MOS device includes a first spacer liner. The semiconductor structure further includes a second MOS device on the second region wherein the second MOS device includes a second spacer liner. A first stressed film having a first thickness is formed over the first MOS device and directly on the first spacer liner. A second stressed film having a second thickness is formed over the second MOS device and directly on the second spacer liner. The first and the second stressed films may be formed of a same material.