The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2008

Filed:

Apr. 05, 2005
Applicants:

Zhijian MA, Cupertino, CA (US);

Pao-lu Huang, San Jose, CA (US);

Pauli Hsueh, San Jose, CA (US);

Jeong Choi, Palo Alto, CA (US);

Inventors:

Zhijian Ma, Cupertino, CA (US);

Pao-Lu Huang, San Jose, CA (US);

Pauli Hsueh, San Jose, CA (US);

Jeong Choi, Palo Alto, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

A photomask and a method for forming a photomask are disclosed in which die regions that define features for a process step of a semiconductor fabrication process are formed on a photomask and a test pattern for a different process step is formed in a blading area of the photomask. Also, a method for forming test structures is disclosed in which the photomask is exposed to transfer the test pattern to a semiconductor substrate. The process step that is associated with the test pattern is then performed, forming a test structure on the semiconductor substrate. By utilizing blading areas of photomasks and including test patterns for different process steps on the same photomask, more test structures can be obtained, without the need to generate additional photomasks for testing purposes.


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