The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2008

Filed:

Feb. 02, 2006
Applicants:

Yuji Harada, Joetsu, JP;

Jun Hatakeyama, Joetsu, JP;

Yoshio Kawai, Joetsu, JP;

Masaru Sasago, Hirakata, JP;

Masayuki Endo, Izumi, JP;

Kazuhiko Maeda, Tokyo, JP;

Haruhiko Komoriya, Kawagoe, JP;

Michitaka Ootani, Kawagoe, JP;

Inventors:

Yuji Harada, Joetsu, JP;

Jun Hatakeyama, Joetsu, JP;

Yoshio Kawai, Joetsu, JP;

Masaru Sasago, Hirakata, JP;

Masayuki Endo, Izumi, JP;

Kazuhiko Maeda, Tokyo, JP;

Haruhiko Komoriya, Kawagoe, JP;

Michitaka Ootani, Kawagoe, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/32 (2006.01);
U.S. Cl.
CPC ...
Abstract

A fluorinated polymer comprising recurring units of formulae (1a) to (1d) and having a Mw of 1,000-500,000 is provided. Ris an acid labile group, Ris a single bond or methylene, a1, a2, a3, and a4 are numbers from more than 0 to less than 1, and 0<a1+a2+a3+a4≦1, b is 1 or 2, and c is 0 or 1. A resist composition comprising the polymer, when processed by the lithography involving ArF exposure, has many advantages including resolution, line edge roughness, etch resistance


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