The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2008
Filed:
May. 28, 2001
Ryohei Itatani, Kyoto, JP;
Mikio Deguchi, Ehime, JP;
Bencherki Mebarki, Champs-sur-Marne, FR;
Toshihiko Toda, Ehime, JP;
Heitaro Ban, Ehime, JP;
Ryohei Itatani, Legal Representative, Kyoto, JP;
Ryohei Itatani, Kyoto, JP;
Mikio Deguchi, Ehime, JP;
Bencherki Mebarki, Champs-sur-Marne, FR;
Toshihiko Toda, Ehime, JP;
Heitaro Ban, Ehime, JP;
Ryohei Itatani, legal representative, Kyoto, JP;
Three Tec Co., Ltd., Ehime, JP;
Youth Engineering Co., Ltd., Ehime, JP;
Abstract
A processing apparatus for subject of the present invention uses a high voltage electrode and a ground electrode, and generates plasma under atmospheric pressure in a reaction passage through which a to-be-processed subject passes. For example, even fluorocompound such as PFC including CFcan effectively be decomposed because the fluorocompound is brought into contact with plasma in a small space for sufficient time, and the apparatus has a small and simple structure. Therefore, the apparatus can be added to each process chamber.