Line width measuring method, substrate processing method, substrate processing apparatus and substrate cooling processing unit

Abstract

In optical line width measurement performed using the scatterometry technique, the present invention measures the line width formed on a substrate more accurately than in the prior art. After a predetermined pattern is formed in a resist film on a substrate, the refractive index and the extinction coefficient of the resist film are measured. Based on the measured values, calculation is performed to obtain calculated light intensity distributions of reflected light reflected from a plurality of virtual patterns. The calculated light intensity distributions are stored, and their library is created. The substrate for which the refractive index and so on are measured is irradiated with light, and the light intensity distribution of its reflected light is measured. The light intensity distribution is collated with the calculated light intensity distributions in the library, so that the line width of the virtual pattern having a matching light intensity distribution is regarded as the line width of the real pattern. Since the library of the light intensity distributions of the virtual pattern is created based on the actually measured refractive index and so on after the formation of the pattern, an accurate line width matching the pattern state at the time of measuring the line width is measured.