The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2008

Filed:

Apr. 13, 2005
Applicants:

Robert Linder, Tigard, OR (US);

Eric Kneedler, Portland, OR (US);

Inventors:

Robert Linder, Tigard, OR (US);

Eric Kneedler, Portland, OR (US);

Assignee:

Fei Company, Hillsboro, OR (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 23/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

An improved method for rapidly and accurately modifying small structures, including structures on a micron or nanometer scale, suitable for the repair of defects in lithographic photo-masks and semiconductors on a nano-scopic level. Features or samples repaired may be conductive or non-conductive. A single instrument can be employed to both observe the surface of the mask or wafer, and to effectuate the repair of conductive and non-conductive features thereon. Using a Stylus-Nano-Profilometer probe, rapid lateral strokes across the sample surface in a definable pattern at known high applied pressure are used to effectuate defect repair. The tip of the probe can also be dithered rapidly in a pattern or used as to create a jackhammer effect to more effectively remove material from the sample surface.


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