The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2008
Filed:
Oct. 12, 2004
Kuei-chang Tsai, Cupertino, CA (US);
Chunyuan Chao, Fremont, CA (US);
Chia-shun Hsiao, Hsin-Chu, TW;
Kuei-Chang Tsai, Cupertino, CA (US);
Chunyuan Chao, Fremont, CA (US);
Chia-Shun Hsiao, Hsin-Chu, TW;
ProMOS Technologies Inc., Hsin Chua, TW;
Abstract
A contact via to a surface of a semiconductor material is provided, the contact via having a sidewall which is produced by anisotropically etching a dielectric layer which is placed on via openings. A protective layer is provided on the surface of the semiconductor material. To protect the substrate, an initial etch through an interlayer dielectric is performed to create an initial via which extends toward, but not into the substrate. At least a portion of the protective layer is retained on the substrate. In another step, the final contact via is created. During this step the protective layer is penetrated to open a via to the surface of the semiconductor material.