The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2008
Filed:
Jul. 26, 2002
Keiji Horioka, Chiba, JP;
Chun Yan, San Jose, CA (US);
Taeho Shin, San Jose, CA (US);
Roger Alan Lindley, Santa Clara, CA (US);
Panyin Hughes, Gaithersburg, MD (US);
Douglas H. Burns, Saratoga, CA (US);
Evans Y. Lee, Milpitas, CA (US);
Bryan Y. Pu, San Jose, CA (US);
Qi LI, San Jose, CA (US);
Mahmoud Dahimene, Sunnyvale, CA (US);
Keiji Horioka, Chiba, JP;
Chun Yan, San Jose, CA (US);
Taeho Shin, San Jose, CA (US);
Roger Alan Lindley, Santa Clara, CA (US);
Panyin Hughes, Gaithersburg, MD (US);
Douglas H. Burns, Saratoga, CA (US);
Evans Y. Lee, Milpitas, CA (US);
Bryan Y. Pu, San Jose, CA (US);
Qi Li, San Jose, CA (US);
Mahmoud Dahimene, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method and apparatus for controlling a magnetic field gradient within a magnetically enhanced plasma reactor. The apparatus comprises a cathode pedestal supporting a wafer within an enclosure, a plurality of electromagnets positioned proximate the enclosure for producing a magnetic field in the enclosure and a magnetic field control element, positioned proximate the electromagnets, for controlling the magnetic field proximate a specific region of the wafer.