The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2008
Filed:
Dec. 11, 2006
Applicants:
Shigemi Murakawa, Minato-ku, JP;
Toshikazu Kumai, Minato-ku, JP;
Toshio Nakanishi, Amagasaki, JP;
Inventors:
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23F 1/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
A gate insulation film () of a MISFET () is constituted of a silicon oxide film (), silicon nitride film (), and high-permittivity film (). The silicon oxide film () and silicon nitride film () are formed by microwave plasma processing with a radial line slot antenna.