The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2008
Filed:
Feb. 18, 2005
Masafumi Ura, Kanagawa, JP;
Hidetoshi Kurogi, Kanagawa, JP;
Toshiharu Yubitani, Kanagawa, JP;
Noboru Furuichi, Kanagawa, JP;
Masafumi Ura, Kanagawa, JP;
Hidetoshi Kurogi, Kanagawa, JP;
Toshiharu Yubitani, Kanagawa, JP;
Noboru Furuichi, Kanagawa, JP;
Komatsu Denshi Kinzoku Kabushiki Kaisha, Kanagawa, JP;
Abstract
The method for manufacturing a single crystal semiconductor achieves an object to reduce the impurity concentration nonuniformity within a semiconductor wafer plane and thus to improve the wafer planarity by introducing an impurity into the single crystal semiconductor more uniformly during the pulling of the single crystal semiconductor from a melt. In the course of pulling the single crystal semiconductor (), the rotating velocity (ω) of the single crystal semiconductor () being pulled is adjusted to a predetermined value or higher, and a magnetic field having a strength in a predetermined range is applied to the melt (). Particularly, the crystal peripheral velocity is adjusted to 0.126 m/sec or higher, and M/Vis adjusted to 35.5≦M/V≦61.3. More desirably, the crystal peripheral velocity is adjusted to 0.141 m/sec or higher, and M/Vis adjusted to 40.3≦M/V≦56.4.