The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2008
Filed:
Jul. 05, 2005
Yeow Kheng Lim, Singapore, SG;
Wuping Liu, Singapore, SG;
Tae Jong Lee, Singapore, SG;
Bei Chao Zhang, Singapore, SG;
Juan Boon Tan, Singapore, SG;
Alan Cuthbertson, Newcastle Upon Tyne, GB;
Chin Chuan Neo, Singapore, SG;
Yeow Kheng Lim, Singapore, SG;
Wuping Liu, Singapore, SG;
Tae Jong Lee, Singapore, SG;
Bei Chao Zhang, Singapore, SG;
Juan Boon Tan, Singapore, SG;
Alan Cuthbertson, Newcastle Upon Tyne, GB;
Chin Chuan Neo, Singapore, SG;
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Abstract
An aligned dual damascene opening structure, comprising the following. A structure having a metal structure formed thereover. A patterned layer stack over the metal structure; the layer stack comprising, in ascending order: a patterned bottom etch stop layer; a patterned lower dielectric material layer; a patterned middle etch stop layer; and a patterned middle dielectric material layer; the lower and middle dielectric layers being comprised of the same material. An upper trench opening in the patterned bottom etch stop layer and the patterned lower dielectric material layer; and a lower via opening in the patterned middle etch stop layer and the patterned middle dielectric material layer. The lower via opening being in communication with the upper trench opening. Wherein the upper trench opening and the lower via opening comprise an aligned dual damascene opening.