The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2008
Filed:
Jan. 31, 2005
Wen-chuan Chiang, Hsin-Chu, TW;
Cheng-ku Chen, Hsin-Chu, TW;
Mu-chi Chiang, Hsin-Chu, TW;
Min-hwa Chi, Palo Alto, CA (US);
Wen-Chuan Chiang, Hsin-Chu, TW;
Cheng-Ku Chen, Hsin-Chu, TW;
Mu-Chi Chiang, Hsin-Chu, TW;
Min-Hwa Chi, Palo Alto, CA (US);
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device including a contact etch stop layer and contact hole formation method for reduced underlying material loss and improved device performance, the method including providing a semiconductor substrate including an active region including a CMOS device, STI structures, and metal silicide regions; forming a fluorine doped amorphous carbon layer over the active region; forming a PMD layer on the fluorine doped amorphous carbon layer; dry etching contact holes in the PMD layer to expose the fluorine doped amorphous carbon layer; and, removing the fluorine doped amorphous carbon layer according to a dry stripping process.