The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2008
Filed:
Sep. 14, 2006
Yoko Hayashida, Tokyo, JP;
Yoko Hayashida, Tokyo, JP;
Elpida Memory, Inc., Tokyo, JP;
Abstract
Semiconductor Integrated Circuit (IC) devices such as diode and MOSFET that protect circuits from Electrostatic Discharge (ESD) are formed. A diode is formed by an N+ (or P+) and P+ (or N+) diffusion layers within an N (or P) well on a P (or N) type semiconductor substrate. The N+ (or P+) diffusion layer of the diode is connected to the power supply. Additionally, an NMOSFET (or PMOSFET) is formed with N+ (or P+) source/drain regions and a gate on the same P (or N) type substrate. The P+ (or N+) diffusion layer of the diode and the N+ (or P+) source/drain regions of the NMOSFET (or PMOSFET) are connected to a fuse through second and first levels of metal wirings.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile