The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2008

Filed:

Apr. 23, 2004
Applicants:

Jinhan Choi, San Jose, CA (US);

Shashank Deshmukh, San Jose, CA (US);

Sang Yi, Sunnyvale, CA (US);

Kyeong-tae Lee, San Jose, CA (US);

Inventors:

Jinhan Choi, San Jose, CA (US);

Shashank Deshmukh, San Jose, CA (US);

Sang Yi, Sunnyvale, CA (US);

Kyeong-Tae Lee, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of etching metals and/or metal-containing compounds using a plasma comprising a bromine-containing gas. In one embodiment, the method is used during fabrication of a gate structure of a field effect transistor having a titanium nitride gate electrode, an ultra-thin (about 10 to 20 Angstroms) silicon dioxide gate dielectric, and a polysilicon upper contact. In a further embodiment, the gate electrode is selectively notched to a pre-determined width.


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