The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2008
Filed:
Apr. 21, 2005
Atsushi Endo, Tokyo, JP;
Tomonori Fujiwara, Tokyo, JP;
Yuichiro Morozumi, Tokyo, JP;
Katsushige Harada, Tokyo, JP;
Shigeru Nakajima, Tokyo, JP;
Dong-kyun Choi, Tokyo, JP;
Haruhiko Furuya, Tokyo, JP;
Kazuo Yabe, Tokyo, JP;
Atsushi Endo, Tokyo, JP;
Tomonori Fujiwara, Tokyo, JP;
Yuichiro Morozumi, Tokyo, JP;
Katsushige Harada, Tokyo, JP;
Shigeru Nakajima, Tokyo, JP;
Dong-Kyun Choi, Tokyo, JP;
Haruhiko Furuya, Tokyo, JP;
Kazuo Yabe, Tokyo, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method of using a film formation apparatus for a semiconductor process includes a step of removing a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus. This step is performed while supplying a cleaning gas containing hydrogen fluoride into the reaction chamber, and forming a first atmosphere within the reaction chamber, which allows water to be present as a liquid film.