The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2008
Filed:
Apr. 28, 2006
Demetrius Sarigiannis, Boise, ID (US);
Garo J. Derderian, Boise, ID (US);
Cem Basceri, Boise, ID (US);
Gurtej S. Sandhu, Boise, ID (US);
F. Daniel Gealy, Kuna, ID (US);
Chris M. Carlson, Boise, ID (US);
Demetrius Sarigiannis, Boise, ID (US);
Garo J. Derderian, Boise, ID (US);
Cem Basceri, Boise, ID (US);
Gurtej S. Sandhu, Boise, ID (US);
F. Daniel Gealy, Kuna, ID (US);
Chris M. Carlson, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is formed, followed by a desired deposited composition from reaction with the intermediate composition, collectively from flowing multiple different composition deposition precursors to the substrate within the deposition chamber. A material adheres to a chamber internal component surface from such sequentially forming. After such sequentially forming, a reactive gas flows to the chamber which is different in composition from the multiple different deposition precursors and which is effective to react with such adhering material. After the reactive gas flowing, such sequentially forming is repeated. Further implementations are contemplated.