The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2008
Filed:
Sep. 24, 2004
Masahisa Sonoda, Mie, JP;
Hiroaki Tsunoda, Mie, JP;
Eiji Sakagami, Mie, JP;
Hidemi Kanetaka, Mie, JP;
Kenji Matsuzaki, Mie, JP;
Takanori Matsumoto, Mie, JP;
Masahisa Sonoda, Mie, JP;
Hiroaki Tsunoda, Mie, JP;
Eiji Sakagami, Mie, JP;
Hidemi Kanetaka, Mie, JP;
Kenji Matsuzaki, Mie, JP;
Takanori Matsumoto, Mie, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device includes forming a gate-insulating film on a semiconductor substrate; forming a gate electrode on the gate-insulating film to be electrically insulated from the semiconductor substrate; etching the gate electrode, the gate insulating film and the semiconductor substrate to form a trench which is used to electrically isolate a device region for forming a device from the remainder region on the substrate top surface; and etching the inside of the trench using a gas containing Cland HBr with a different condition from the etching condition of the semiconductor substrate.