The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2008
Filed:
Apr. 27, 2005
Hidemitsu Aoki, Kanagawa, JP;
Tatsuya Suzuki, Kanagawa, JP;
Takuo Ohwada, Tokyo, JP;
Kaoru Ikegami, Soka, JP;
Norio Ishikawa, Soka, JP;
Hidemitsu Aoki, Kanagawa, JP;
Tatsuya Suzuki, Kanagawa, JP;
Takuo Ohwada, Tokyo, JP;
Kaoru Ikegami, Soka, JP;
Norio Ishikawa, Soka, JP;
NEC Electronics Corporation, Kanagawa, JP;
Kanto Kagaku Kabushiki Kaisha, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and then removing the resist pattern by ashing. A wafer after an ashing process is cleaned using a cleaning solution comprised of aqueous solution having a content of the fluorine-containing compound of 1.0 to 5.0 mass %, a content of chelating agent of 0.2 to 5.0 mass %, and a content of the organic acid salt of 0.1 to 3.0 mass %.