The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2008
Filed:
Feb. 01, 2005
Shwang-ming Jeng, Hsin-Chu, TW;
Ming Ling Yeh, Tainan, TW;
Tien-i Bao, Hsin-Chu, TW;
Keng-chu Lin, Ping-Tung, TW;
Shwang-Ming Jeng, Hsin-Chu, TW;
Ming Ling Yeh, Tainan, TW;
Tien-I Bao, Hsin-Chu, TW;
Keng-Chu Lin, Ping-Tung, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor method of manufacturing involving low-k dielectrics is provided. The method includes depositing a hydrocarbon of the general composition CHon the surface of a low-k dielectric. The hydrocarbon layer is deposited by reacting a precursor material, preferably CHor (CH)CHCHCH, using a PECVD process. In accordance with embodiments of this invention, carbon diffuses into the low-k dielectric, thereby reducing low-k dielectric damage caused by plasma processing or etching. Other embodiments comprise a semiconductor device having a low-k dielectric, wherein the low-k dielectric has carbon-adjusted dielectric region adjacent a trench sidewall and a bulk dielectric region. In preferred embodiments, the carbon-adjusted dielectric region has a carbon concentration not more than about 5% less than in the bulk dielectric region.