The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 22, 2008

Filed:

May. 25, 2006
Applicants:

Yeou-lang Hsieh, Taipei, TW;

Ching-kun Huang, Chupei, TW;

Jeng-dong Sheu, Longtan Township, Taoyaun County, TW;

Inventors:

Yeou-Lang Hsieh, Taipei, TW;

Ching-Kun Huang, Chupei, TW;

Jeng-Dong Sheu, Longtan Township, Taoyaun County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 5/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory device includes a first memory cell area having a first latch area where one or more electronic components are constructed for storing a value, and a first peripheral area surrounding the first latch area; and a second memory cell area being disposed adjacent to a first side of the first memory cell area, and having a second latch area where one or more electronic components are constructed for storing a value, and a second peripheral area surrounding the second latch area. One edge of the first memory cell area shifts away from its corresponding edge of the second memory cell area. Thus, the area or yield rate of the memory device can be adjusted.


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