The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2008
Filed:
Jun. 20, 2003
Henry Wei-ming Chung, Hsinchu, TW;
Shin-yi Tsai, Hsinchu, TW;
Ming-chung Liang, Hsinchu, TW;
Abstract
A semiconductor manufacturing method that includes depositing a first layer over a substrate, providing a layer of hardmask over the first layer, patterning and defining the hardmask layer to form at least two hardmask structures, wherein each hardmask structure includes at least one substantially vertical sidewall and one substantially horizontal top, and wherein the hardmask structures are separated by a first space, depositing a photo-insensitive material over the at least two hardmask structures and the first layer, wherein an amount of the photo-insensitive material deposited on the top of the hardmask structures is substantially greater than an amount of the photo-insensitive material deposited on the at least one sidewall of the hardmask structures, wherein the hardmask structures with the photo-insensitive layer on the sidewalls thereof are separated by a second space, and wherein the first space is greater than the second space.