The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2008
Filed:
Jun. 21, 2005
Chun-fu Chen, Hsinchu, TW;
Chi-tung Huang, Hsinchu, TW;
Yung-tai Hung, Hsinchu, TW;
Chun-chung Huang, Hsinchu, TW;
Chun-Fu Chen, Hsinchu, TW;
Chi-Tung Huang, Hsinchu, TW;
Yung-Tai Hung, Hsinchu, TW;
Chun-Chung Huang, Hsinchu, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
A method for improving accuracy of determining polish endpoint of chemical mechanical polish (CMP) process is provided. The method is performed before the CMP process. First, a test wafer with a to-be-polished layer and a material layer under the to-be-polished layer is provided. Then, a test beam with a wavelength is provided to irradiate the test wafer. The CMP process is performed to the test wafer to remove the to-be-polished layer until the material layer is exposed while the reflection of the test beam during the polish process is continuously detected. The reflection tendency is detected when the to-be-polished layer is to be completely removed and when the CMP process reaches the interface between the to-be-polished layer and the material layer. If the reflection tendency is gradually weakened, the test beam with the wavelength is chosen for the subsequent polish process.