The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2008
Filed:
Feb. 17, 2005
Chien-hao Chen, Zhaangwei Shiang, TW;
Vincent S. Chang, Hsinchu, TW;
Chia-lin Chen, Jhudong Township, Hsinchu County, TW;
Tze-liang Lee, Hsinchu, TW;
Shih-chang Chen, Hsin-Chu, TW;
Chien-Hao Chen, Zhaangwei Shiang, TW;
Vincent S. Chang, Hsinchu, TW;
Chia-Lin Chen, Jhudong Township, Hsinchu County, TW;
Tze-Liang Lee, Hsinchu, TW;
Shih-Chang Chen, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A new and improved liner modification method for a liner oxide layer in an STI trench is disclosed. According to the method, an STI trench is etched in a substrate and a liner oxide layer is formed on the trench surfaces by oxidation techniques. The method further includes pre-treatment of the trench surfaces using a nitrogen-containing gas prior to formation of the liner oxide layer, post-formation nitridation of the liner oxide layer, or both pre-treatment of the trench surfaces and post-formation nitridation of the liner oxide layer. The liner modification method of the present invention optimizes the inverse narrow width effect (INWE) and gate oxide integrity (GOI) of STI structures and prevents diffusion of dopant into the liner oxide layer during subsequent processing.