Field effect transistor on a substrate with (111) orientation having zirconium oxide gate insulation and cobalt or nickel silicide wiring

Abstract

Diffusion layers-are formed on a silicon substrate, and gate dielectric filmsand gate electrodesare formed on these diffusion layers-so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films. Gate dielectric filmsare formed, for example, by CVD. As substrate, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrateor gate electrodes. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less thanof the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.