The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2008
Filed:
Dec. 22, 2005
Heidi Lee Baks, Poughkeepsie, NY (US);
Shyng-tsong Chen, Patterson, NY (US);
Timothy Joseph Dalton, Ridgefield, CT (US);
Nicholas Colvin Masi Fuller, Ossining, NY (US);
Kaushik Arun Kumar, Beacon, NY (US);
Heidi Lee Baks, Poughkeepsie, NY (US);
Shyng-Tsong Chen, Patterson, NY (US);
Timothy Joseph Dalton, Ridgefield, CT (US);
Nicholas Colvin Masi Fuller, Ossining, NY (US);
Kaushik Arun Kumar, Beacon, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming damascene interconnect structure in an organo-silicate glass layer without causing damage to the organo-silicate glass material. The method includes forming a stack of hardmask layers over the organo-silicate glass layer, defining openings in the hardmask and organo-silicate glass layers using a combination of plasma etch and plasma photoresist removal processes and performing one or more additional plasma etch processes that do not include oxygen containing species to etch the openings to depths required for forming the damascene interconnect structures and to remove any organo-silicate material damaged by the combination of plasma etch and plasma photoresist removal processes.