The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2008
Filed:
Jan. 13, 2005
Christos Dimitrios Dimitrakopoulos, Somers, NY (US);
Stephen Mcconnell Gates, Ossining, NY (US);
Alfred Grill, White Plains, NY (US);
Michael Wayne Lane, Cortlandt Manor, NY (US);
Eric Gerhard Liniger, Sandy Hook, CT (US);
Xiao HU Liu, Croton On Hudson, NY (US);
Son Van Nguyen, Yorktown Heights, NY (US);
Deborah Ann Neumayer, Danbury, CT (US);
Thomas Mccarroll Shaw, Peekskill, NY (US);
Christos Dimitrios Dimitrakopoulos, Somers, NY (US);
Stephen McConnell Gates, Ossining, NY (US);
Alfred Grill, White Plains, NY (US);
Michael Wayne Lane, Cortlandt Manor, NY (US);
Eric Gerhard Liniger, Sandy Hook, CT (US);
Xiao Hu Liu, Croton On Hudson, NY (US);
Son Van Nguyen, Yorktown Heights, NY (US);
Deborah Ann Neumayer, Danbury, CT (US);
Thomas McCarroll Shaw, Peekskill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than 46 MPa.