The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2008
Filed:
Jun. 16, 2005
Shifang LI, Pleasanton, CA (US);
Junwei Bao, Fremont, CA (US);
Hong Qui, Union City, CA (US);
Victor Liu, Sunnyvale, CA (US);
Shifang Li, Pleasanton, CA (US);
Junwei Bao, Fremont, CA (US);
Hong Qui, Union City, CA (US);
Victor Liu, Sunnyvale, CA (US);
Timbre Technologies, Inc., Santa Clara, CA (US);
Abstract
An optical metrology model for a repetitive structure is optimized by selecting one or more profile parameters using one or more selection criteria. One or more termination criteria are set, the one or more termination criteria comprising measures of stability of the optical metrology model. The profile shape features of the repetitive structure are characterized using the one or more selected profile parameters. The optical metrology model is optimized using a set of values for the one or more selected profile parameters. One or more profile parameters of the profile of the repetitive structure are determined using the optimized optical metrology model and one or more measured diffraction signals. Values of the one or more termination criteria are calculated using the one or more determined profile parameters. When the calculated values of the one or more termination criteria do not match the one or more set termination criteria, the selection of the one or more profile parameters and/or the characterization of the profile shape features of the repetitive structure are revised.